- 您现在的位置：买卖IC网 > Sheet目录416 > FDC658P (Fairchild Semiconductor)MOSFET P-CH 30V 4A SSOT-6
Typical Electrical Characteristics (continued)
10
I D = -4A
3000
8
V DS = -5V
-10V
1000
C iss
-15V
6
4
300
C oss
2
100
f = 1 MHz
C rss
V GS = 0 V
0
0
3
6 9
Q g , GATE CHARGE (nC)
12
15
30
0.1
0.3 1 3 7
-V DS , DRAIN TO SOURCE VOLTAGE (V)
15
30
Figure 7. Gate Charge Characteristics.
80
5
Figure 8. Capacitance Characteristics .
IMI
(ON
RD
1m
10m
0m
1 0 0 u
30
10
3
1
0.3
0.1
0.03
T
)L
S
V GS = -10V
SINGLE PULSE
R θ JA = 156°C/W
T A = 25°C
10
1s
DC
s
s
s
s
4
3
2
1
SINGLE PULSE
R θ JA =156°C/W
T A = 25°C
0.01
0.1
0.2
0.5
1
2
5
10
20
50
0
0.01
0.1
1
10
100
300
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
0.5
0.2
0.1
D = 0.5
0.2
0.1
P(pk)
R θ JA (t) = r(t) * R θ JA
R θ JA = 156°C/W
0.05
0.05
t 1
t 2
0.02
0.01
0.02
0.01
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC658P Rev.C
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDC855N
MOSFET N-CH 30V 6.1A 6-SSOT
FDC8601
MOSFET N-CH 100V TRENCH SSOT-6
FDC8602
MOSFET N-CH DUAL 100V 6-SSOT
FDC86244
MOSFET N-CH 150V 2.3A 6SSOT
FDC8878
MOSFET N-CH 30V 8A 6-SSOT
FDC8884
MOSFET N-CH 30V 6.5A 6-SSOT
FDC8886
MOSFET N-CH 30V 6.5A 6-SSOT
FDD050N03B
MOSFET N-CH 30V 90A DPAK
相关代理商/技术参数
FDC658P
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC658P
制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 50 MO SSOT6
FDC658P-NL
制造商:Fairchild Semiconductor Corporation 功能描述:
FDC6901L
功能描述:MOSFET Integ. Load Switch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6901L
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC6901L_Q
功能描述:功率驱动器IC Integ. Load Switch RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
FDC697P
功能描述:MOSFET PCh 1.8V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC697P_F077
功能描述:MOSFET PCh 1.8V PwrTrnch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube